HGTG7N60A4D

IGBT Transistors 600V N-Ch IGBT SMPS Series HF

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SeekIC No. : 00143717 Detail

HGTG7N60A4D: IGBT Transistors 600V N-Ch IGBT SMPS Series HF

floor Price/Ceiling Price

Part Number:
HGTG7N60A4D
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.9 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 34 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 125 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Power Dissipation : 125 W
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 34 A


Features:

• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
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Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Tech Brief 334  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG



Parameters:

Technical/Catalog InformationHGTG7N60A4D
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)34A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 7A
Power - Max125W
Mounting TypeThrough Hole
Package / CaseTO-247
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGTG7N60A4D
HGTG7N60A4D



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