Collector- Emitter Voltage VCEO Max
: 600 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single
Maximum Gate Emitter Voltage
: +/- 20 V
Package / Case
: TO-220-3
Gate-Emitter Leakage Current
: +/- 100 nA
Continuous Collector Current at 25 C
: 24 A
Collector-Emitter Saturation Voltage
: 1.65 V
Power Dissipation
: 104 W
Features: • 24A, 600V at TC = 25
• Typical Fall Time at TJ = 150 . . . . . . . . . . . . . . . . 210ns
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel DiodeSpecificationsCollector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 24 A
At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A
Average Diode Forward Current at 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ICM 96 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 14) . . . . . . . . . . . SSOA 24A at 600V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 104 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . 0.83 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . TJ, TSTG -40 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . tSC 4 µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . tSC 13 µsDescriptionThis family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The HGTP12N60C3D has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The HGTP12N60C3D IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.
The HGTP12N60C3D IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49182.
Parameters: Technical/Catalog Information | HGTP12N60C3D |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 24A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 12A |
Power - Max | 104W |
Mounting Type | Through Hole |
Package / Case | TO-220AB |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HGTP12N60C3D HGTP12N60C3D |