IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG7N60A4: IGBT Transistors 600V N-Channel IGBT SMPS Series
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Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Ti...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 1.9 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 34 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
Power Dissipation : | 125 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |