HGTG7N60A4

IGBT Transistors 600V N-Channel IGBT SMPS Series

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SeekIC No. : 00143798 Detail

HGTG7N60A4: IGBT Transistors 600V N-Channel IGBT SMPS Series

floor Price/Ceiling Price

Part Number:
HGTG7N60A4
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.9 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 34 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 125 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Power Dissipation : 125 W
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 34 A


Features:

• >100kHz Operation at 390V, 7A
• 200kHz Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . . .  75ns at TJ = 125oC
• Low Conduction Loss



Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Single Pulse Avalanche Energy at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  EAS
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .  TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Tech Brief 334  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG



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