HGTP14N37G3VL

IGBT Transistors 14A 370V N-Ch

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SeekIC No. : 00143825 Detail

HGTP14N37G3VL: IGBT Transistors 14A 370V N-Ch

floor Price/Ceiling Price

Part Number:
HGTP14N37G3VL
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 380 V
Maximum Gate Emitter Voltage : +/- 10 V Continuous Collector Current at 25 C : 25 A
Gate-Emitter Leakage Current : 500 uA Power Dissipation : 136 W
Maximum Operating Temperature : + 150 C Package / Case : TO-220AB-3
Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : TO-220AB-3
Continuous Collector Current at 25 C : 25 A
Collector- Emitter Voltage VCEO Max : 380 V
Maximum Gate Emitter Voltage : +/- 10 V
Power Dissipation : 136 W
Gate-Emitter Leakage Current : 500 uA


Features:

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175
• Internal Series and Shunt Gate Resistors
• Low Conduction Loss
• Ignition Energy Capable



Pinout

  Connection Diagram


Specifications

Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . .BVCER 380 V
Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . .BVECS 24 V
Collector Current Continuous at VGE = 5V, TC = 25 . . . . . . . . . . . . . . . . . . . . . . . .IC25 25 A
Collector Current Continuous at VGE = 5V, TC = 110 . . . . . . . . . . . . . . . . . . . . . .IC110 18 A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V
Inductive Switching Current at L = 3mH, TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . ISCIS 15 A
Inductive Switching Current at L = 3mH, T C = 150. . . . . . . . . . . . . . . . . . . . . . ISCIS 11.5 A
Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25 . . . . . . . . . . . . . . .  EAS 340 mJ
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 136 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG -55 to 175
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ -55 to 175
Electrostatic Voltage HBM at 250pF, 1500Ω All Pin Configurations. . . . . . . . . . . . . . . ESD 5 kV
Electrostatic Voltage MM at 200pF, 0Ω All Pin Configurations. . . . . . . . . . . . . . . . . . . ESD 2 kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. TPKG 260



Description

This HGTP14N37G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP14N37G3VL include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.

Formerly Developmental Type TA49169.




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