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HGTH20N50E1D

Features: • 20A, 400V and 500V• VCE(ON) 2.5V Max.• TFALL 1ms, 0.5ms• Low On-State Voltage• Fast Switching Speeds• High Input Impedance• Anti-Parallel DiodeApplication• Power Supplies• Motor Drives• Protective CircuitsPinoutSpecificationsC...

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SeekIC No. : 004362178 Detail

HGTH20N50E1D: Features: • 20A, 400V and 500V• VCE(ON) 2.5V Max.• TFALL 1ms, 0.5ms• Low On-State Voltage• Fast Switching Speeds• High Input Impedance• Anti-Parallel DiodeA...

HGTH20N50E1D Data Sheet

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Part Number:
HGTH20N50E1D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 20A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL 1ms, 0.5ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode


Application

• Power Supplies
• Motor Drives
• Protective Circuits


Pinout

Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   . . . . . . VCES 400 500 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR 400 500 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . .VGE ±20 ±20 V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC 20 20 A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . ICM 35 35 A
Diode Forward Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . .  IF25 35 35 A
Diode Forward Current Continuous at TJ = +90. . . . . . . . . . . . . . . . . . . .  . . . . . . . IF90 20 20 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 100 100 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . 0.8 0.8 W/
Operating and Storage Junction Temperature Range . . . . . . TJ, TSTG -55 to +150 -55 to +150


Description

The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, and HGTH20N50E1D  can be operated directly from low power integrated circuits.




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