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HGTH20N50E1

Features: • 15A and 20A, 400V and 500V• VCE(ON) 2.5V• TFI 1ms, 0.5ms• Low On-State Voltage• Fast Switching Speeds• High Input Impedance• No Anti-Parallel DiodeApplication• Power Supplies• Motor Drives• Protection CircuitsPinoutSpecificati...

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SeekIC No. : 004362177 Detail

HGTH20N50E1: Features: • 15A and 20A, 400V and 500V• VCE(ON) 2.5V• TFI 1ms, 0.5ms• Low On-State Voltage• Fast Switching Speeds• High Input Impedance• No Anti-Parallel Di...

HGTH20N50E1 Data Sheet

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Part Number:
HGTH20N50E1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 15A and 20A, 400V and 500V
• VCE(ON) 2.5V
• TFI 1ms, 0.5ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode


Application

• Power Supplies
• Motor Drives
• Protection Circuits


Pinout

Connection Diagram


Specifications

Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . .    VCES 400  500  400  500 V
Collector-Gate Voltage RGE = 1MW. . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .   . VCGR 400 500 400 500 V
Reverse Collector-Emitter Voltage . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . VCES(rev.) -5 -5 -5 -5 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  VGE ±20 ±20 ±20 ±20 V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  IC 20 20 15 15 A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . ICM 35 35 35 35 A
Power Dissipation at TC = +25 . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . PD 100 100 75 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  .  . 0.8 0.8 0.6 0.6 W/
Operating and Storage Junction Temperature Range . .  TJ, TSTG -55 to +150  -55 to +150  -55 to +150  -55 to +150


Description

The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1  can be operated directly from low-power integrated circuits.




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