HGTP14N40F3VL

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2 V
Package / Case : TO-220AB-3
Maximum Gate Emitter Voltage : +/- 10 V
Collector- Emitter Voltage VCEO Max : 420 V
Continuous Collector Current at 25 C : 38 A
Gate-Emitter Leakage Current : 10 uA
Power Dissipation : 262 W


Features:

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = +150
• Ignition Energy Capable


Application

• Automotive Ignition
• Small Engine Ignition
• Fuel Ignitor


Pinout




Specifications

Collector-Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 420 V
Collector-Gate Breakdown Voltage R_GE = 10kW . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR 420 V
Collector Current Continuous
V_GE = 4.5V at TC = +25o . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25 19A
V_GE = 4.5V at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C90 14A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±10 V
Gate-Emitter Voltage Pulsed or . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±12 V
Gate-Emitter Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_GEM ±10 mA
Open Secondary Turn-Off Current
L = 2.3mH at +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CO 17A
L = 2.3mH at +150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CO 12A
Drain to Source Avalanche Energy at L = 2.3mH, T_C = +25. . . . . . . . . . . . . . . . . E_AS 330 mJ
Power Dissipation Total at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT 83 W
Power Dissipation Derating T_C > +25 0.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . T_J, T_STG -40 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 260
Electrostatic Voltage at 100pF, 1500W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_SD 6 KV


Description

This HGTP14N40F3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP14N40F3VL  include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications are unique to this automotive application and are intended to assure device survival in this harsh environment. The development type number for this device is TA49023.