IGBT Transistors PWR IGBT 14A 600V N-CHANNEL
HGTP7N60B3D: IGBT Transistors PWR IGBT 14A 600V N-CHANNEL
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 1.8 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Gate-Emitter Leakage Current : | +/- 100 nA | Power Dissipation : | 60 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220AB-3 |
Packaging : | Tube |
Technical/Catalog Information | HGTP7N60B3D |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 14A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 7A |
Power - Max | 60W |
Mounting Type | Through Hole |
Package / Case | TO-220AB |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HGTP7N60B3D HGTP7N60B3D |