HGTP7N60B3D

IGBT Transistors PWR IGBT 14A 600V N-CHANNEL

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HGTP7N60B3D: IGBT Transistors PWR IGBT 14A 600V N-CHANNEL

floor Price/Ceiling Price

US $ .91~1.27 / Piece | Get Latest Price
Part Number:
HGTP7N60B3D
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.27
  • $1.14
  • $1.01
  • $.91
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.8 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 100 nA Power Dissipation : 60 W
Maximum Operating Temperature : + 150 C Package / Case : TO-220AB-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.8 V
Package / Case : TO-220AB-3
Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 60 W


Features:

• 14A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode



Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . .  . . . . . . .. .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..  . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..  . . IC110
Average Rectified Forward Current at TC = 152oC . . . . . . . . . .  . IF(AV)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . .. .. . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . .VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2)  . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . .  . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . .  . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . .  . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . .tSC



Parameters:

Technical/Catalog InformationHGTP7N60B3D
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)14A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 7A
Power - Max60W
Mounting TypeThrough Hole
Package / CaseTO-220AB
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGTP7N60B3D
HGTP7N60B3D



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