IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTP12N60A4: IGBT Transistors 600V N-Channel IGBT SMPS Series
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 54 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
Power Dissipation : | 167 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220-3 | Packaging : | Tube |
The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.
This HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.Formerly Developmental Type TA49335.
Technical/Catalog Information | HGTP12N60A4 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 54A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
Power - Max | 167W |
Mounting Type | Through Hole |
Package / Case | TO-220AB |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HGTP12N60A4 HGTP12N60A4 |