Features: • Ignition Energy = 340mJ at TJ (STARTING) = 25
• Typical Internal Clamp Voltage = 410V at TJ = 25
• Logic Level Gate Drive
• ESD Gate Protection
• TJ = 175
• Internal Series and Shunt Gate Resistors
• 24V Reverse Battery Capability
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"Specifications HGT1S14N41G3VLS,
HGTP14N41G3VL UNITS
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CER 430 V
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES 445 V
Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
ECS 24 V
Collector Current Continuous at V
GE = 5V, T
C = 25
. . . . . . . . . . . . . . . . . . .I
C25 25 A
at V
GE = 5V, T
C = 110
. . . . . . . . . . . . . . . . . .I
C110 18 A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM ±10 V
Inductive Switching Current at L = 3 mH, T
C = 25
. . . . . . . . . . . . . . . . . . . . I
SCIS 15 A
at L = 3 mH, T
C = 150
. . . . . . . . . . . . . . . . . . . .I
SCIS 11.5 A
Collector to Emitter Avalanche Energy at L = 3 mH, T
C = 25
. . . . . . . . . . . . .E
AS 340 mJ
Power Dissipation Total at T
C = 25
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D 136 W
Power Dissipation Derating T
C > 25
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG -55 to 175
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J -55 to 175
Electrostatic Discharge Voltage HBM at 250pF, 1500 All Pin Configurations . . E
SD 5 kV
Electrostatic Discharge Voltage MM at 200pF, 0 All Pin Configurations . . . . . . E
SD 2 kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . T
L 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. May be exceeded if IGEM is limited to 10mA.
DescriptionThis HGTP14N41G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP14N41G3VL include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.Formerly Developmental Type TA49360.