HGTP14N41G3VL

Features: • Ignition Energy = 340mJ at TJ (STARTING) = 25• Typical Internal Clamp Voltage = 410V at TJ = 25• Logic Level Gate Drive• ESD Gate Protection• TJ = 175• Internal Series and Shunt Gate Resistors• 24V Reverse Battery Capability• Related Lite...

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HGTP14N41G3VL Picture
SeekIC No. : 004362193 Detail

HGTP14N41G3VL: Features: • Ignition Energy = 340mJ at TJ (STARTING) = 25• Typical Internal Clamp Voltage = 410V at TJ = 25• Logic Level Gate Drive• ESD Gate Protection• TJ = 175•...

floor Price/Ceiling Price

Part Number:
HGTP14N41G3VL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

• Ignition Energy = 340mJ at TJ (STARTING) = 25
• Typical Internal Clamp Voltage = 410V at TJ = 25
• Logic Level Gate Drive
• ESD Gate Protection
• TJ = 175
• Internal Series and Shunt Gate Resistors
• 24V Reverse Battery Capability
• Related Literature
   - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

                                                                                                                               HGT1S14N41G3VLS,
                                                                                                                                 HGTP14N41G3VL       UNITS
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCER        430                      V
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES         445                      V
Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVECS          24                       V
Collector Current Continuous at VGE = 5V, TC = 25 . . . . . . . . . . . . . . . . . . .IC25             25                       A
                                               at VGE = 5V, TC = 110 . . . . . . . . . . . . . . . . . .IC110           18                       A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM         ±10                      V
Inductive Switching Current at L = 3 mH, TC = 25 . . . . . . . . . . . . . . . . . . . . ISCIS           15                       A
                                             at L = 3 mH, TC = 150. . . . . . . . . . . . . . . . . . . .ISCIS         11.5                      A
Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25 . . . . . . . . . . . . .EAS            340                      mJ
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P            136                      W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                 0.91                   W/
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG      -55 to 175                
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T         -55 to 175                
Electrostatic Discharge Voltage HBM at 250pF, 1500 All Pin Configurations . . ESD            5                         kV
Electrostatic Discharge Voltage MM at 200pF, 0 All Pin Configurations . . . . . . ESD            2                         kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . T            300                      
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG         260                       

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 

NOTE:
1. May be exceeded if IGEM is limited to 10mA.




Description

This HGTP14N41G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP14N41G3VL include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.Formerly Developmental Type TA49360.




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