HGTG40N60B3

IGBT Transistors 600V N-Channel IGBT UFS Series

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SeekIC No. : 00142662 Detail

HGTG40N60B3: IGBT Transistors 600V N-Channel IGBT UFS Series

floor Price/Ceiling Price

US $ 4.71~6.23 / Piece | Get Latest Price
Part Number:
HGTG40N60B3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $6.23
  • $5.68
  • $5.12
  • $4.71
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.4 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 70 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 290 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 70 A
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 1.4 V
Power Dissipation : 290 W


Features:

• 70A, 600V at TC = +25
• Square Switching SOA Capability
• Typical Fall Time - 160ns at +150
• Short Circuit Rating
• Low Conduction Loss





Pinout

  Connection Diagram




Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector-Gate Voltage, RGE = 1MW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 600 V
Collector Current Continuous At TC = +25(Package Limited) . . . . . . . . . . . . . . . . .IC25 70 A
Collector Current Continuous At TC = +110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 40 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 330 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TC = +150. . . . . . . . . . . . . . . . . .SSOA 160A at 0.8 BVCES
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 290 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.33 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . .TJ, TSTG -40 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 2 s
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 s




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
HGTG40N60B3 Full Production RoHS Compliant $11.54 TO-247 3 RAIL TBD Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: G40N60B3
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product HGTG40N60B3 is available. Click here for more information .





Description

The HGTG40N60B3 is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolartransistors. The device has the high input impedance of aMOSFET and the low on-state conduction loss of a bipolartransistor. The much lower on-state voltage drop varies onlymoderately between 25°C and 150°C.

The HGTG40N60B3 IGBT is ideal for many high voltage switchingapplications operating at moderate frequencies where lowconduction losses are essential, such as: AC and DC motorcontrols, power supplies and drivers for solenoids, relaysand contactors.Formerly Developmental Type TA49052.






Parameters:

Technical/Catalog InformationHGTG40N60B3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 40A
Power - Max290W
Mounting TypeThrough Hole
Package / CaseTO-247
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGTG40N60B3
HGTG40N60B3



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