HGTG40N60B3

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 70 A
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 1.4 V
Power Dissipation : 290 W


Features:

• 70A, 600V at T_C = +25
• Square Switching SOA Capability
• Typical Fall Time - 160ns at +150
• Short Circuit Rating
• Low Conduction Loss




Pinout






Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector-Gate Voltage, RGE = 1MW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR 600 V
Collector Current Continuous At T_C = +25(Package Limited) . . . . . . . . . . . . . . . . .I_C25 70 A
Collector Current Continuous At T_C = +110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 40 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 330 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_C = +150. . . . . . . . . . . . . . . . . .SSOA 160A at 0.8 BV_CES
Power Dissipation Total at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 290 W
Power Dissipation Derating T_C > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.33 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . .T_J, T_STG -40 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 2 s
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 10 s

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
HGTG40N60B3	Full Production	RoHS Compliant	$11.54	TO-247	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: G40N60B3

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product HGTG40N60B3 is available. Click here for more information .

Description

The HGTG40N60B3 is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolartransistors. The device has the high input impedance of aMOSFET and the low on-state conduction loss of a bipolartransistor. The much lower on-state voltage drop varies onlymoderately between 25°C and 150°C.

The HGTG40N60B3 IGBT is ideal for many high voltage switchingapplications operating at moderate frequencies where lowconduction losses are essential, such as: AC and DC motorcontrols, power supplies and drivers for solenoids, relaysand contactors.Formerly Developmental Type TA49052.

Parameters:

Technical/Catalog Information	HGTG40N60B3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	70A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 40A
Power - Max	290W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG40N60B3 HGTG40N60B3