HGTG40N60A4

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.7 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 75 A
Power Dissipation : 625 W


Features:

• 100kHz Operation At 390V, 40A
• 200kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at T_J = 125
• Low Conduction Loss


Pinout




Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 75 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 63 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  I_CM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150, Figure 2 . . . . . . . . . . . . . . SSOA 200A at 600V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 625 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .  T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 260


Description

The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

This HGTG40N60A4 IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.Formerly Developmental Type TA49347.

Parameters:

Technical/Catalog Information	HGTG40N60A4
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	75A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 40A
Power - Max	625W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG40N60A4 HGTG40N60A4