Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Configuration
: Single
Maximum Gate Emitter Voltage
: +/- 20 V
Collector- Emitter Voltage VCEO Max
: 1200 V
Power Dissipation
: 167 W
Package / Case
: TO-220AB-3
Gate-Emitter Leakage Current
: +/- 250 nA
Continuous Collector Current at 25 C
: 21 A
Collector-Emitter Saturation Voltage
: 2.45 V
Features: • 21A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"Specifications
|
SYMBOL |
PARAMETERS |
RATING
|
UNITS |
B VCES
I C25
I C110
ICM
V GES
V GEM
S SOA
P D
T STG
TL
Tpkg
t SC
tSC |
Collector to Emitter Voltage
Collector Current Continuous
At TC = 25oC
At TC = 110oC
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at TJ = 150oC (Figure
Power Dissipation Total at TC = 25oC
Power Dissipation Derating TC > 25oC
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s
Package Body for 10s, see Tech Brief 334
Short Circuit Withstand Time (Note 2) at VGE = 15V.
Short Circuit Withstand Time (Note 2) at VGE = 12V.
|
1200
21
10
40
±20
±30
30A at 1200V
167
1.33
-55 to 150
300
260
8
15
|
V
A
A
A
V
V
W
W/o C
o C
o C
o C
µs
µs |
DescriptionThe HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308.
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49306.
Parameters: | Technical/Catalog Information | HGTP5N120BND |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 21A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 5A |
| Power - Max | 167W |
| Mounting Type | Through Hole |
| Package / Case | TO-220AB |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HGTP5N120BND
HGTP5N120BND
|
HGTP5N120BND Data Sheet
