Features: • 63A, 600V at TC = 25• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150• Short Circuit Rating• Low Conduction LossPinoutSpecificationsCollector To Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . ...
HGTG30N60C3: Features: • 63A, 600V at TC = 25• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150• Short Circuit Rating• Low Conductio...
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Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Ti...
The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.
The HGTG30N60C3 IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49051.