HGTG40N60C3

Continuous Collector Current at 25 C :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : 250 nA
Package / Case : TO-247-3
Collector-Emitter Saturation Voltage : 1.3 V
Power Dissipation : 291 W


Features:

• 75A, 600V, T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss


Pinout




Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 75 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 40 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  I_CM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . .  SSOA 40A at 600V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D 291 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.33 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_ARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 2) at V_GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . .t_SC 5 µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V. . . . . . . . . . . . . . . . . . . . . . . .t_SC 10 µs


Description

The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The HGTG40N60C3 IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly developmental type TA49273.