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HGTP2N120CND

Features: • 13A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150• Short Circuit Rating• Low Conduction Loss• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil...

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SeekIC No. : 004362208 Detail

HGTP2N120CND: Features: • 13A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150• Short Circuit Rating• Low Conductio...

HGTP2N120CND Data Sheet

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HGTP2N120CND
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Product Details

Description



Features:

• 13A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
  Temperature Compensating SABER™ Model
  www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
  Components to PC Boards"


Pinout

Connection Diagram


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .  IC25 13 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . .  IC110 7 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ICM 20 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . .  SSOA 13A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 104 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/
Operating and Storage Junction Temperature Range . . . . . . . . . .    TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . .  .tSC 8 µs


Description

The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs.HGTP2N120CND and HGT1S2N120CNDS  are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120).

The HGTP2N120CND and HGT1S2N120CNDS  IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49311.




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