HGTP20N60B3

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3


Features:

• 40A, 600V at TC = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150
• Short Circuit Rated
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Pinout




Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . .BVCGR 600 V
Collector Current Continuous
At TC= 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . IC25 40 A
At TC= 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 160 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ= 150 (Figure 2) . . . . . . . . .SSOA 30A at 600V
Power Dissipation Total at TC= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. PD 165 W
Power Dissipation Derating TC> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .1.32 W/
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -40 to 50
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . .. TL300
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE= 15V . . . . . . . . . . . . . . . . . .  tSC 4µs
Short Circuit Withstand Time (Note 2) at VGE= 12V . . . . . . . . . . . . . . . . . . . tSC 10µs


Description

The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly developmental type TA49050.