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HGTG32N60E2

Features: • 32A, 600V• Latch Free Operation• Typical Fall Time - 600ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . BVCES 600 VCollector-Gat...

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SeekIC No. : 004362164 Detail

HGTG32N60E2: Features: • 32A, 600V• Latch Free Operation• Typical Fall Time - 600ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . ....

HGTG32N60E2 Data Sheet

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Part Number:
HGTG32N60E2
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 32A, 600V
• Latch Free Operation
• Typical Fall Time - 600ns
• High Input Impedance
• Low Conduction Loss


Pinout

Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . BVCES 600 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. VCGR 600 V
Collector Current Continuous at TC = +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  IC25 50 A
Collector Current Continuous at VGE = 15V, at TC = +90 . . . . . . . . . . . . . . . . . . . IC90 32 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  ICM 200 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = +150 . . . . . . . . . . . . . . . . . SSOA 200A at 0.8 BVCES
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  PD 208 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . .TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2)at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 3 ms
Short Circuit Withstand Time (Note 2)at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 ms


Description

The HGTG32N60E2 IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. HGTG32N60E2 has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

HGTG32N60E2 IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

This HGTG32N60E2 incorporates generation two design techniques which yield improved peak current capability and larger short circuit withstand capability than previous designs.




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