Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Time . . . . . . . . . . . . . . 350ns at TJ = 150• Short Circuit RatingPinoutSpecificationsCollector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..BVCES...
HGTP15N120C3: Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Time . . . . . . . . . . . . . . 350ns at TJ = 150• Short Circuit RatingPinoutSpecificationsColl...
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Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 35 A
At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 15 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 120 A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . .. SSOA 15A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 164 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . tSC 6 s
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . tSC 25 s
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.