IGBT Transistors
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C |
Package / Case : | TO-220AB-3 |
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 6 A
At TC = +110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 3 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 24 A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = +150, Fig. 14. . . . . . . . . SSOA 18A at 480 V
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . PD 33 W
Power Dissipation Derating TC > +25. . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/
Operating and Storage Junction Temperature Range . . . . . TJ, TSTG -40 to +150
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6 . . . . . . . . . . . . .tSC 8 s
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = +125, RGE = 82W.
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.