HGTG30N60A4

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.8 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 75 A
Power Dissipation : 463 W


Features:

• >100kHz Operation at 390V, 30A
• 200kHz Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at T_J = 125
• Low Conduction Loss
• Temperature Compensating SABER Model




Pinout






Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .. .. . .B_VCES 600 V
Collector Current Continuous At T_C = 25. . . . . . . . . . . . . . . . . . . . . . .I_C25 75 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . I_C110 60 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . ..... I_CM 240 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . ..... V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . ......V_GEM ±30 V
Switching Safe Operating Area at T_J = 150, Figure 2 . . . . ..SSOA 150A at 600V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . ...... P_D 463 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . .....3.7 W/
Operating and Storage Junction Temperature Range . . . ..T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . ........T_L 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . ......... T_PKG 260

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
HGTG30N60A4	Full Production	RoHS Compliant	$7.80	TO-247	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: G30N60A4

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product HGTG30N60A4 is available. Click here for more information .

Description

The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

This HGTG30N60A4 IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.Formerly Developmental Type TA49343.

The HGTG30N60A4 is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolartransistors. This device has the high input impedance of aMOSFET and the low on-state conduction loss of a bipolartransistor. The much lower on-state voltage drop varies onlymoderately between 25°C and 150°C.

This HGTG30N60A4 IGBT is ideal for many high voltage switchingapplications operating at high frequencies where lowconduction losses are essential. This device has beenoptimized for high frequency switch mode power supplies.Formerly Developmental Type TA49343.

Parameters:

Technical/Catalog Information	HGTG30N60A4
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	75A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 30A
Power - Max	463W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG30N60A4 HGTG30N60A4