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Pack:PHILIPS Vendor:Other Category:Other
N-channel enhancement mode vertical D-MOS transistor BSN254 in a SOT54 (TO-92) variant package.
Mfg:Philips Pack:Sot-23 D/C:09+ Vendor:Other Category:Other
N-channel enhancement mode vertical D-MOS transistor BSN20W in a 3 pin plastic SOT323 SMD package.
Vendor:Other Category:Other
N-channel enhancement mode vertical D-MOS transistor BSN205A in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays...
Vendor:Other Category:Other
N-channel enhancement mode vertical D-MOS transistor BSN205 in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays,...
Mfg:PHI Pack:TO-92 D/C:99 Vendor:Other Category:Other
N-channel enhancement mode vertical D-MOS transistor BSN10A in a TO-92 envelope, intended for use in general purpose fast switching applications.
Mfg:PHILIPS Pack:TO-92 D/C:03+ Vendor:Other Category:Other
N-channel BSN10 enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use in general purpose fast switching applications.
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:EUPEC D/C:6IGBT: 75A1200V Vendor:Other Category:Other
Mfg:module Pack:INFINEON D/C:05+ Vendor:Other Category:Other
Mfg:EUPEC D/C:2IGBT: 75A1200V Vendor:Other Category:Other
Mfg:SIEMENS D/C:1IGBT&1DIO: 75A1200V Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM50GX120DN2 is one member of the IGBT power module that has three points of features:(1)package with insulated metal base plate;(2)including fast free-wheeling diodes;(3)single switch with chopper diode.
The absol...
Vendor:Other Category:Other
The BSM50GP120 is a kind of IGBT-module and has some electrical properties as follows. (1): repetitive peak reverse voltage (VRRM) is 1600 V; (2): RMS forward current per chip is 40 A; (3): DC forward current (ID) is 50 ...
Mfg:EUPEC Pack:module D/C:N/A Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:module Pack:INFINEON D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:INFINEON D/C:05+ Vendor:Other Category:Other
Mfg:EUPEC D/C:6IGBT: 50A1200V Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Vendor:Other Category:Other
BSM50GB120DN2 is a type of IGBT power module which has three unique features: The first one is half-bridge.The second one is including fast free-wheeling diodes.The third one is package with insulated metal base plate.
...
Mfg:SIEMENS D/C:1IGBT&1DIO: 50A1200V Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:EUPEC D/C:1IGBT: 400A1200V Vendor:Other Category:Other
Mfg:EUPEC Pack:MODULE D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM400GA120D is designed as the IGBT power module that has four points of features:(1)low loss IGBT; (2)low inductance single switch; (3)including fast free- wheeling diodes; (4)package with insulated metal base plat...
Vendor:Other Category:Other
The BSM35GD120DN2E3224 is designed as one kind of IGBT power module. Features of it are:(1)solderable power module; (2)3-phase full-bridge; (3)including fast free-wheel diodes; (4)package with insulated metal base plate....
Mfg:EUPEC D/C:6IGBT: 35A1200V Vendor:Other Category:Other
Mfg:SIEMENS D/C:04+ Vendor:Other Category:Other
Mfg:SIEMENS D/C:2IGBT: 35A1200V Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM30GD60DN2E3224 is designed as one kind of IGBT power module. Features of it are:(1)solderable power module; (2)3-phase full-bridge; (3)including fast free-wheel diodes; (4)package with insulated metal base plate.
...
Mfg:module Pack:INFINEON D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM300GB120DLC is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 300 A (Tc=80 °C) or 625 A (Tc=25 °C);(3)repetit...
Vendor:Other Category:Other
The BSM300GA170DN2S is designed as the IGBT power module that has four points of features:(1)single switch; (2)including fast free-wheeling diodes; (3)enlarged diode area; (4)package with insulated metal base plate.
The...
Vendor:Other Category:Other
Mfg:module Pack:INFINEON D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM300GA120DN2S E3256 is a kind of IGBT power module. It has some features as follows. (1) single switch; (2) including fast free-wheeling diodes; (3) enlarged diode area; (4) package with insulated metal base plate....
Vendor:Other Category:Other
Mfg:EUPEC D/C:1IGBT: 300A1200V Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM300GA120DN is designed as the IGBT power module that has four points of features:(1)single switch; (2)including fast free-wheeling diodes; (3)enlarged diode area; (4)package with insulated metal base plate.
The a...
Mfg:SIEMENS Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:SIEMENS D/C:6IGBT: 25A1200V Vendor:Other Category:Other
Mfg:module Pack:INFINEON D/C:05+ Vendor:Other Category:Other
Mfg:EUPEC D/C:09+ Vendor:Other Category:Other
Mfg:SIEMENS D/C:2IGBT: Vendor:Other Category:Other
Mfg:SIEMENS Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:SIEMENS D/C:06+ Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM20GD60DN2E3224 is designed as one kind of IGBT power module. Features of it are:(1)solderable power module; (2)3-phase full-bridge; (3)including fast free-wheel diodes; (4)package with insulated metal base plate.
...
Mfg:SIEMENS D/C:6IGBT: 20A600V Vendor:Other Category:Other
Mfg:SIEMENS Vendor:Other Category:Other
Mfg:module Pack:INFINEON D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM200GB120DN3 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 200 A (Tc=80 °C) or 290 A (Tc=25 °C);(3)Power d...
Vendor:Other Category:Other
The BSM200GB120DN2 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 200 A (Tc=80 °C) or 290 A (Tc=25 °C);(3)Power d...
Vendor:Other Category:Other
Mfg:EUPEC D/C:1IGBT&1DIO: 200A1200V Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM200GA170DN2S is one kind of IGBT-modules. The absolute maximum ratings of the BSM200GA170DN2S can be summarized as:(1)collector-emitter voltage:1200 V;(2)DC-collector current:370 A;(3)repetitive peak collector cur...
Mfg:EUPEC D/C:1IGBT: 200A1700V Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM200GA120DN2 is a type of IGBT power module.features of it are:(1)single switch;(2)incl uding fast free-wheeling diodes;(3)package with insulated metal base plate.
The absolute maximum ratings and electrical chara...
Vendor:Other Category:Other
The BSM200GA120D is one kind of IGBT-modules. The absolute maximum ratings of the BSM200GA120D can be summarized as:(1)collector-emitter voltage: 1200 V;(2)DC-collector current:370 A;(3)repetitive peak collector current:...
Mfg:SIEMENS D/C:1MOS: Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:SIEMENS D/C:1MOS: Vendor:Other Category:Other
Mfg:SIEMENS D/C:6IGBT: 15A600V Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:SIEMENS D/C:1MOS: Vendor:Other Category:Other
Mfg:Siemens AG D/C:n/a Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM150GT120DN2 has four features.(1)solderable power module.(2)3-phase full-bridge.(3)including fast free-wheel diodes.(4)package with insulated metal base plate.
The BSM150GT120DN2 has some maximum ratings.(1)the p...
Vendor:Other Category:Other
Mfg:EUPEC D/C:2IGBT: 150A1700V Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The BSM150GB120DN2 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 150 A (Tc=80 °C) or 210 A (Tc=25 °C);(3)Power d...
Vendor:Other Category:Other
Firstly,some electrical specifications about BSM150GB120DLC will be given to you.Kollektor-Emitter-Sperrspannung collector-emitter voltage(VCES) is 1200 V.Kollektor-Dauergleichstrom (TC = 80 °C IC) is nom. 150 A.DC-coll...
Vendor:Other Category:Other
Mfg:EUPEC D/C:1IGBT&1DIO: 150A1200V Vendor:Other Category:Other
Mfg:module Pack:INFINEON D/C:05+ Vendor:Other Category:Other
Mfg:SIEMENS D/C:1MOS: 200A100V Vendor:Other Category:Other
Mfg:EUPEC D/C:6IGBT: 10A600V Vendor:Other Category:Other
Mfg:EUPEC D/C:6IGBT: 10A1200V Vendor:Other Category:Other
Mfg:SIEMENS D/C:1MOS: 200A50V Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Vendor:Other Category:Other
BSM100GB120DN2 is a type of IGBT power module which has four unique features: The first one is 3-phase full-bridge.The second one is including fast free-wheeling diodes.The third one is package with insulated metal base ...
Vendor:Other Category:Other
The BSM100GD120DN is designed as one kind of IGBT power module. Features of the it are:(1)solderable power module; (2)3-phase full-bridge; (3)including fast free-wheel diodes; (4)package with insulated metal base plate.
...
Mfg:EUPEC D/C:2IGBT: 100A1700V Vendor:Other Category:Other
Mfg:module Pack:INFINEON D/C:05+ Vendor:Other Category:Other
Mfg:EUPEC D/C:2IGBT: 100A1200V Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:INFINEON D/C:08+ Vendor:Infineon Technologies (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 30V 5.5A 6-TSOP
Mfg:INF Pack:SP000012580_MOSFET D/C:07+ Vendor:Infineon Technologies (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 20V 4.7A 6-TSOP
Mfg:Infineon Pack:Original Vendor:Infineon Technologies Category:Discrete Semiconductor Products
MOSFET P-CH 20V 6A 6-TSOP
Vendor:Other Category:Other
The HYB 5(3)117800 BSJ-60 are 16 MBit dynamic RAMs based on the die revisions "G" & "F" and organized as 2 097 152 words by 8-bits. The HYB 5(3)117800 utilizes a submicron CMOS silicon gate process technology, as wel...
Vendor:Other Category:Other
The HYB 5(3)117800 BSJ-50 are 16 MBit dynamic RAMs based on the die revisions "G" & "F" and organized as 2 097 152 words by 8-bits. The HYB 5(3)117800 utilizes a submicron CMOS silicon gate process technology, as wel...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
© 2008-2012 SeekIC.com Corp.All Rights Reserved.