Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltageRGE = 20 k VCGR 600 Gate...
BSM20GD60DN2: Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe BSM200GA120D is one kind of IGBT-modules. The absolute maximum ratings of the BSM20...
Parameter | Symbol |
Values |
Unit |
Collector-emitter voltage | VCE |
600 |
V |
Collector-gate voltage RGE = 20 k |
VCGR |
600 | |
Gate-emitter voltage | VGE |
±20 | |
DC collector current TC = 40 |
IC |
20 |
A |
Pulsed collector current, tp = 1 ms TC = 40 |
ICpuls |
40 | |
Power dissipation per IGBT TC = 25 |
Ptot |
90 |
W |
Chip temperature | Tj |
+ 150 |
|
Storage temperature | Tstg |
-55 ... + 150 | |
Thermal resistance, chip case | RthJC |
1.6 |
K/W |
Diode thermal resistance, chip case | RthJCD |
1.8 | |
Insulation test voltage, t = 1min. | Vis |
2500 |
Vac |
Creepage distance | - |
16 |
mm |
Clearance | - |
11 | |
DIN humidity category, DIN 40 040 | - |
F |
sec |
IEC climatic category, DIN IEC 68-1 | - |
55 / 150 / 56 |