Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plate• E3226: long terminals, limited current per terminalSpecifications Parameter Symbol Values Unit Collector-emitter voltage V...
BSM50GD60DN2E3226: Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plate• E3226: long terminals, limited current per ter...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Values |
Unit |
Collector-emitter voltage |
VCE |
600 |
V |
Collector-gate voltage, RGS = 20 k |
VCGR |
600 | |
Gate-source voltage |
V GE |
± 20 | |
DC collector current TC = 25 °C TC = 80 °C |
Ic |
50
|
A |
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
100
| |
Power dissipation,per IGBT TC = 25 °C |
Ptot |
200 |
W |
Chip temperature |
Tj |
+ 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |