BSL211SP

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quad Drain
Package / Case : TSOP
Continuous Drain Current : - 4.7 A
Resistance Drain-Source RDS (on) : 67 m Ohms


Features:

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TA=25°C TA=70°C	ID	-4.7 -3.8	A
Pulsed drain current TA=25°C	I D puls	-18.8
Avalanche energy, single pulse ID=-5.5 A , VDD=-25V, RGS=25	EAS	26	mJ
Reverse diode dv/dt IS=-5.5A, VDS=24V, di/dt=200A/s, Tjmax=150°C	dv/dt	-6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TA=25°C	Ptot	2	A
Operating and storage temperature	T j , Tstg	-55... +150	°C
IEC climatic category; DIN IEC 68-1		55/150/56

Parameters:

Technical/Catalog Information	BSL211SP
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.7A
Rds On (Max) @ Id, Vgs	67 mOhm @ 4.7A, 4.5V
Input Capacitance (Ciss) @ Vds	654pF @ 15V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	12.4nC @ 4.5V
Package / Case	6-TSOP
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSL211SP BSL211SP BSL211SPINCT ND BSL211SPINCTND BSL211SPINCT