BSM100GD120DN2

Packaging :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Gate-Emitter Leakage Current : 400 nA
Collector-Emitter Saturation Voltage : 2.5 V
Package / Case : EconoPACK 3A
Continuous Collector Current at 25 C : 150 A
Power Dissipation : 680 W


Features:

• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate




Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1200	V
Collector-gate voltage, RGS = 20 k	VCGR	1200
Gate-source voltage	V GE	± 20
DC collector current TC = 25 °C TC = 80 °C	Ic	150 100	A
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C	Ic puls	300 200
Power dissipation, TC = 25 °C	Ptot	680	W
Chip temperature	Tj	+ 150	°C
Storage temperature	Tstg	-55 ... + 150

Description

BSM100GB120DN2 is a type of IGBT power module which has four unique features: The first one is 3-phase full-bridge.The second one is including fast free-wheeling diodes.The third one is package with insulated metal base plate.The forth one is solerable power module.

There are some maximum ratings about BSM100GD120DN2.Collector-emitter voltage(VCE) is 1200 V.Collector-gate voltage(RGE = 20 kohms,VCGR) is 1200 V.Gate-emitter voltage(VGE) is ±20 V.DC collector current(IC) is 100 A(TC = 80 °C) or is 150(TC = 25 °C).Pulsed collector current, tp = 1 ms(ICpuls) is 200A (TC = 80 °C) or is 300 A(TC = 25 °C).Power dissipation per IGBT(Ptot) is 680 W(TC = 25).Storage temperature(Tstg) is -55 to + 150.

In conclusion,BSM100GD120DN2 is a general introduction to this kind of product,if you are interested in it and want to know more about it, please pay more attention to our web!