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BSM100GAR120DN2

IGBT Transistors 1200V 100A DUAL

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SeekIC No. : 00144068 Detail

BSM100GAR120DN2: IGBT Transistors 1200V 100A DUAL

BSM100GAR120DN2 Data Sheet

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Part Number:
BSM100GAR120DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 100 A Gate-Emitter Leakage Current : 400 nA
Power Dissipation : 800 W Maximum Operating Temperature : + 150 C
Package / Case : IS6a ( 62 mm )-5    

Description

Packaging :
Maximum Operating Temperature : + 150 C
Configuration : Single
Gate-Emitter Leakage Current : 400 nA
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Continuous Collector Current at 25 C : 100 A
Collector-Emitter Saturation Voltage : 2.5 V
Package / Case : IS6a ( 62 mm )-5
Power Dissipation : 800 W


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