BSM200GB120DN2

IGBT Modules 1200V 200A DUAL

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SeekIC No. : 00141272 Detail

BSM200GB120DN2: IGBT Modules 1200V 200A DUAL

floor Price/Ceiling Price

US $ 89.34~99.26 / Piece | Get Latest Price
Part Number:
BSM200GB120DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~5
  • 5~10
  • Unit Price
  • $99.26
  • $94.3
  • $89.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/12

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Half Bridge Module
Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 290 A Gate-Emitter Leakage Current : 400 nA
Power Dissipation : 1.4 KW Maximum Operating Temperature : + 150 C
Package / Case : Half Bridge2    

Description

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Gate-Emitter Leakage Current : 400 nA
Collector-Emitter Saturation Voltage : 2.5 V
Configuration : Half Bridge Module
Package / Case : Half Bridge2
Continuous Collector Current at 25 C : 290 A
Power Dissipation : 1.4 KW


Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate





Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage
RGE = 20 k
VCGR
1200
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC

290

200

A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
lCpuls

580

400

Power dissipation per IGBT
TC = 25 °C
Ptot
1400
W
Chip temperature
Tj
+ 150
°C
Storage temperature
Tstg
-55 ... + 150
°C





Description

The BSM200GB120DN2 is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 200 A (Tc=80 °C) or 290 A (Tc=25 °C);(3)Power dissipation per IGBT: 1400 W;(4)Chip temperature: + 150 °C;(5)Storage temperature: -55 to +150 °C;(6)Thermal resistance, chip case: </= 0.09 K/W;(7)Diode thermal resistance, chip case: </= 0.18 K/W;(8)insulation test voltage: 2.5 kV.

The electrical characteristics of the BSM200GB120DN2 can be summarized as:(1)collector-emitter saturation voltage: 2.5 or 3.1 V;(2)Gate-emitter leakage current: 400 nA;(3)Transconductance: 108 S;(4)input capacitance: 13 nF;(5)reverse transfer capacitance: 1 nF;(6)Output capacitance: 2 nF;(7)Turn-on delay time: 110 to 220 ns;(8)Rise time: 80 to 160 ns;(9)Turn-off delay time: 550 to 800 ns. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .






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