BSM300GB120DLC

Packaging :
Product : IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Operating Temperature : + 125 C
Collector-Emitter Saturation Voltage : 2.1 V
Configuration : Dual
Gate-Emitter Leakage Current : 400 nA
Package / Case : 62MM
Power Dissipation : 2500 W
Continuous Collector Current at 25 C : 625 A


Description

The BSM300GB120DLC is designed as one kind of IGBT-Module device that has some points of electrical properties:(1)collector-emitter voltage: 1200 V;(2)DC-collector current: 300 A (Tc=80 °C) or 625 A (Tc=25 °C);(3)repetitive peak collector current: 600 A;(4)total power dissipation: 2.5 kW;(5)gate-emitter peak voltage: +/- 20 V;(6)DC forward current: 300 A;(7)repetitive peak forward current: 600 A;(8)insulation test voltage: 2.5 kV.

The Characteristic values of the BSM300GB120DLC can be summarized as:(1)collector-emitter saturation voltage: 2.1 or 2.4 V;(2)gate threshold voltage: 4.5 V to 6.5 V;(3)gate charge: 3.2 C;(4)input capacitance: 21 nF;(5)reverse transfer capacitance: 1.4 nF;(6)collector-emitter cut-off current: 5 mA;(7)gate-emitter leakage current: 400 nA. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .