BSM35GD120DN2E3224

Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Packaging : Reel
Power Dissipation : 280 W
Package / Case : EconoPACK 2
Continuous Collector Current at 25 C : 50 A
Gate-Emitter Leakage Current : 150 nA
Collector-Emitter Saturation Voltage : 2.7 V


Description

The BSM35GD120DN2E3224 is designed as one kind of IGBT power module. Features of it are:(1)solderable power module; (2)3-phase full-bridge; (3)including fast free-wheel diodes; (4)package with insulated metal base plate.

The absolute maximum ratings of the BSM35GD120DN2E3224 can be summarized as:(1)collector-emitter voltage:1200 V;(2)collector-gate voltage RGE=20 k:1200 V;(3)gate-emitter voltage:±20 V;(4)DC collector current Tc=25 °C:150 A;(5)DC collector current Tc=80 °C:100 A;(6)IEC climatic category, DIN IEC 68-1:55 / 150 / 56;(7)DIN humidity category, DIN 40 040:F;(8)clearance:11 mm;(9)insulation test voltage, t=1min.:2500 Vac;(10)storage temperature:-55 to +150 . If you want to know more information such as the electrical characteristics about the BSM35GD120DN2E3224, please download the datasheet in www.seekic.com or www.chinaicmart.com .