BSM35GD120DN2

Packaging :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Power Dissipation : 280 W
Package / Case : EconoPACK 2
Continuous Collector Current at 25 C : 50 A
Gate-Emitter Leakage Current : 150 nA
Collector-Emitter Saturation Voltage : 2.7 V


Features:

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate


Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	600	V
Collector-gate voltage RGE = 20 k	VCGR	600
Gate-emitter voltage	VGE	±20
DC collector current TC = 25 TC = 80	IC	50 35	A
Pulsed collector current, tp =1 ms TC = 25 TC = 80	ICpuls	100 70
Power dissipation per IGBT TC = 25	Ptot	280	W
Chip temperature	Tj	+150
Storage temperature	Tstg	-55 ... + 150
Thermal resistance, chip case	RthJC	1.2	K/W
Diode thermal resistance, chip case	RthJCD	1.5
Insulation test voltage, t = 1min.	Vis	2500	Vac
Creepage distance	-	16	mm
Clearance	-	11
DIN humidity category, DIN 40 040	-	F	sec
IEC climatic category, DIN IEC 68-1	-	55 / 150 / 56