BSM75GD120DN2

IGBT Modules 1200V 75A 3-PHASE

product image

BSM75GD120DN2 Picture
SeekIC No. : 00141237 Detail

BSM75GD120DN2: IGBT Modules 1200V 75A 3-PHASE

floor Price/Ceiling Price

US $ 95.31~105.9 / Piece | Get Latest Price
Part Number:
BSM75GD120DN2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • Unit Price
  • $105.9
  • $95.31
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/4

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Hex
Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 103 A Gate-Emitter Leakage Current : 320 nA
Power Dissipation : 520 W Maximum Operating Temperature : + 150 C
Package / Case : EconoPACK 3A    

Description

Packaging :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 103 A
Gate-Emitter Leakage Current : 320 nA
Power Dissipation : 520 W
Package / Case : EconoPACK 3A


Features:

• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate



Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage, RGS = 20 k
VCGR
1200
Gate-source voltage
V GE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
Ic
103
 
75
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Ic puls
206
150
Power dissipation per IGBT TC = 25 °C
Ptot
520
W
Chip temperature
Tj
+ 150
°C
Storage temperature

Tstg

-55 ... + 150



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Inductors, Coils, Chokes
Power Supplies - Board Mount
Static Control, ESD, Clean Room Products
Sensors, Transducers
Potentiometers, Variable Resistors
Programmers, Development Systems
View more