IGBT Modules 1200V 75A 3-PHASE
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Product : | IGBT Silicon Modules | Configuration : | Hex |
Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 2.5 V |
Continuous Collector Current at 25 C : | 103 A | Gate-Emitter Leakage Current : | 320 nA |
Power Dissipation : | 520 W | Maximum Operating Temperature : | + 150 C |
Package / Case : | EconoPACK 3A |
Parameter |
Symbol |
Values |
Unit |
Collector-emitter voltage |
VCE |
1200 |
V |
Collector-gate voltage, RGS = 20 k |
VCGR |
1200 | |
Gate-source voltage |
V GE |
± 20 | |
DC collector current TC = 25 °C TC = 80 °C |
Ic |
103
75
|
A |
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
206
150 | |
Power dissipation per IGBT TC = 25 °C |
Ptot |
520 |
W |
Chip temperature |
Tj |
+ 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |