IGBT Transistors 1200V 100A GAR CH
BSM75GAR120DN2: IGBT Transistors 1200V 100A GAR CH
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 100 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 625 W | Maximum Operating Temperature : | + 150 C |
Package / Case : | IS4 (34 mm )-5 |