Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage, RGS = 20 k ...
BSM35GD120D2: Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe BSM300GA120DN is designed as the IGBT power module that has four points of features...
Parameter |
Symbol |
Values |
Unit |
Collector-emitter voltage |
VCE |
1200 |
V |
Collector-gate voltage, RGS = 20 k |
VCGR |
1200 | |
Gate-source voltage |
V GE |
± 20 | |
DC collector current TC = 25 °C TC = 80 °C |
Ic |
50
35
|
A |
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
100
70 | |
Power dissipation per IGBT TC = 25 °C |
Ptot |
280 |
W |
Chip temperature |
Tj |
+ 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |