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BSM150GB120DN2E3166

Features: • Half-bridge• Including fast free-wheeling diodes• Enlarged diode area• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage, RGS = 20 k ...

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SeekIC No. : 004302169 Detail

BSM150GB120DN2E3166: Features: • Half-bridge• Including fast free-wheeling diodes• Enlarged diode area• Package with insulated metal base plateSpecifications Parameter Symbol Values ...

BSM150GB120DN2E3166 Data Sheet

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Part Number:
BSM150GB120DN2E3166
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Features:

• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate


Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage, RGS = 20 k
VCGR
1200
Gate-source voltage
V GE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
Ic
210
150
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Ic puls
420
300
Power dissipation, TC = 25 °C
Ptot
1250
W
Chip temperature
Tj
+ 150
°C
Storage temperature

Tstg
-55 ... + 150



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