Features: • Low Loss IGBT• Low inductance halfbridge• Including fast free- wheeling diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltageRGE =...
BSM200GB120 DL: Features: • Low Loss IGBT• Low inductance halfbridge• Including fast free- wheeling diodes• Package with insulated metal base plateSpecifications Parameter Symbol ...
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DescriptionThe BSM200GA120D is one kind of IGBT-modules. The absolute maximum ratings of the BSM20...
Parameter |
Symbol |
Values |
Unit |
Collector-emitter voltage |
VCE |
1200 |
V |
Collector-gate voltage RGE = 20 k |
VCGR |
1200 | |
Gate-emitter voltage |
VGE |
± 20 | |
DC collector current TC = 25 °C TC = 80 °C |
IC |
340 200 |
A |
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
ICpuls |
680 400 | |
Power dissipation per IGBT TC = 25 °C |
Ptot |
1400 |
W |
Chip temperature |
Tj |
+ 150 |
°C |
Storage temperature |
Tstg |
-40 ... + 125 |