BSM50GD120DN2E3226

IGBT Modules N-CH 1.2KV 50A

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SeekIC No. : 00142016 Detail

BSM50GD120DN2E3226: IGBT Modules N-CH 1.2KV 50A

floor Price/Ceiling Price

US $ 65.8~69.46 / Piece | Get Latest Price
Part Number:
BSM50GD120DN2E3226
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~6
  • 6~10
  • Unit Price
  • $69.46
  • $65.8
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Hex
Collector- Emitter Voltage VCEO Max : 1200 V Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 50 A Gate-Emitter Leakage Current : 200 nA
Power Dissipation : 350 W Maximum Operating Temperature : + 150 C
Package / Case : EconoPACK 2 Packaging : Reel    

Description

Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Packaging : Reel
Collector-Emitter Saturation Voltage : 2.5 V
Power Dissipation : 350 W
Package / Case : EconoPACK 2
Gate-Emitter Leakage Current : 200 nA
Continuous Collector Current at 25 C : 50 A


Features:

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• E3226: long terminals, limited current per terminal



Specifications

Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage, RGS = 20 k
VCGR
1200
Gate-source voltage
V GE
± 20
DC collector current
TC = 25 °C
TC = 80 °C
Ic
50
45
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Ic puls
100
90
Power dissipation per IGBT TC = 25 °C
Ptot
350
W
Chip temperature
Tj
+ 150
°C
Storage temperature

Tstg

-55 ... + 150



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