IGBT Modules N-CH 1.2KV 50A
BSM50GD120DN2E3226: IGBT Modules N-CH 1.2KV 50A
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Product : | IGBT Silicon Modules | Configuration : | Hex | ||
Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 2.5 V | ||
Continuous Collector Current at 25 C : | 50 A | Gate-Emitter Leakage Current : | 200 nA | ||
Power Dissipation : | 350 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | EconoPACK 2 | Packaging : | Reel |
Parameter |
Symbol |
Values |
Unit |
Collector-emitter voltage |
VCE |
1200 |
V |
Collector-gate voltage, RGS = 20 k |
VCGR |
1200 | |
Gate-source voltage |
V GE |
± 20 | |
DC collector current TC = 25 °C TC = 80 °C |
Ic |
50
45
|
A |
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
100
90 | |
Power dissipation per IGBT TC = 25 °C |
Ptot |
350 |
W |
Chip temperature |
Tj |
+ 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |