BSM50GX120DN2

Package / Case :
Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 78 A
Gate-Emitter Leakage Current : 200 nA
Power Dissipation : 400 W
Configuration : 3-Phase


Description

The BSM50GX120DN2 is one member of the IGBT power module that has three points of features:(1)package with insulated metal base plate;(2)including fast free-wheeling diodes;(3)single switch with chopper diode.

The absolute maximum ratings of the BSM50GX120DN2 can be summarized as:(1)collector-emitter voltage:1200 V;(2)collector-gate voltage (RGE=20 k): 1200 V;(3)gate-emitter voltage:±20 V;(4)DC collector current (Tc=25°C):78 A;(5)DC collector current (Tc=80°C):50 A;(6)pulsed collector current, tp=1 ms (Tc=25°C):156 A;(7)pulsed collector current, tp=1 ms (Tc=80°C):100 A;(8)power dissipation per IGBT (Tc=25°C):400 W;(9)chip temperature:+150°C;(10)storage temperature:-55 to +150°C. If you want to know more information such as the electrical characteristics about the BSM50GX120DN2, please download the datasheet in www.seekic.com or www.chinaicmart.com .