BSL307SP

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Tape & Reel (TR)
Power - Max: 2W
Gate Charge (Qg) @ Vgs: 29nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 5.5A
Package / Case: SC-74, SOT-457
Manufacturer: Infineon Technologies
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 43 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Input Capacitance (Ciss) @ Vds: 805pF @ 25V
Supplier Device Package: P-TSOP6-6


Features:

• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TA=25°C TA=70°C	ID	-5.5 -4.4	A
Pulsed drain current TA=25°C	I D puls	-22
Avalanche energy, single pulse ID=-5.5 A , VDD=-25V, RGS=25	EAS	44	mJ
Reverse diode dv/dt IS=-5.5A, VDS=24V, di/dt=200A/s, Tjmax=150°C	dv/dt	-6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TA=25°C	Ptot	2	A
Operating and storage temperature	T j , Tstg	-55... +150	°C
IEC climatic category; DIN IEC 68-1		55/150/56

Parameters:

Technical/Catalog Information	BSL307SP
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	43 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds	805pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	29nC @ 10V
Package / Case	6-TSOP
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSL307SP BSL307SP BSL307SPINCT ND BSL307SPINCTND BSL307SPINCT