BSM50GP120

Packaging :
Configuration : Hex
Product : IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max : 1200 V
Gate-Emitter Leakage Current : 300 nA
Maximum Operating Temperature : + 125 C
Collector-Emitter Saturation Voltage : 2.5 V
Continuous Collector Current at 25 C : 80 A
Power Dissipation : 360 W
Package / Case : EconoPIM3


Description

The BSM50GP120 is a kind of IGBT-module and has some electrical properties as follows. (1): repetitive peak reverse voltage (VRRM) is 1600 V; (2): RMS forward current per chip is 40 A; (3): DC forward current (ID) is 50 A at TC is 80 ; (4): surge forward current (IFSM) is 500 A at tP is 10 ms, Tvj is 25 and is 400 A at tP is 10 ms,Tvj is 150 ; (5): collector-emitter voltage (VCES) is 1200 V; (6): DC-collector current is 50 A at TC is 80 and is 80 A at TC is 25 ; (7): total power dissipation is 360 W at TC is 25 ; (8): the typical rise time is 45 ns when VGE is ±15 V and Tvj is 25 , the typical fall time is 10 ns at VGE is ±15 V and Tvj is 25 .

There is no more information about BSM50GP120,if you want more details about its electrical characters,please download the datasheet at www.seekic.com.