BSM30GD60DN2 Selling Leads, Price trend, BSM30GD60DN2 DataSheet download, circuit diagram from SeekIC.com

Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltageRGE = 20 k VCGR 600 Gate...

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SeekIC No. : 004302196 Detail

BSM30GD60DN2: Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit ...

BSM30GD60DN2 Data Sheet

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Part Number:: BSM30GD60DN2
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

Description

Features:

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate

Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	600	V
Collector-gate voltage R_GE = 20 k	V_CGR	600
Gate-emitter voltage	V_GE	±20
DC collector current T_C = 40	I_C	30	A
Pulsed collector current, tp =1 ms T_C = 40	I_Cpuls	60	A
Power dissipation per IGBT T_C = 25	P_tot	120	W
Chip temperature	T_j	150
Storage temperature	T_stg	-55 ... + 150
Thermal resistance, chip case	R_thJC	1.2	K/W
Diode thermal resistance, chip case	R_thJCD	1.5	K/W
Insulation test voltage, t = 1min.	V_is	2500	Vac
Creepage distance	-	16	mm
Clearance	-	11	mm
DIN humidity category, DIN 40 040	-	F	sec
IEC climatic category, DIN IEC 68-1	-	55 / 150 / 56	sec

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BSM30GD60DN2

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