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BSM30GD60DN2

Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltageRGE = 20 k VCGR 600 Gate...

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SeekIC No. : 004302196 Detail

BSM30GD60DN2: Features: • Power module• 3-phase full-bridge• Including fast free-wheel diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit ...

BSM30GD60DN2 Data Sheet

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Part Number:
BSM30GD60DN2
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate


Specifications

Parameter Symbol
Values
 Unit
Collector-emitter voltage VCE
600
 V
Collector-gate voltage
RGE = 20 k		 VCGR
600
Gate-emitter voltage VGE
±20
DC collector current
TC = 40
 IC
30
 A
Pulsed collector current, tp =1 ms
TC = 40
 ICpuls
60
Power dissipation per IGBT
TC = 25		 Ptot
120
 W
Chip temperature Tj
150
Storage temperature Tstg
-55 ... + 150
Thermal resistance, chip case RthJC
1.2
 K/W
Diode thermal resistance, chip case RthJCD
1.5
Insulation test voltage, t = 1min. Vis
2500
 Vac
Creepage distance -
16
 mm
Clearance -
11
DIN humidity category, DIN 40 040 -
F
 sec
IEC climatic category, DIN IEC 68-1 -
55 / 150 / 56



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