BSN205

Drain-source voltage ..........................VDS max. 200 V
Gate-source voltage (open drain) ....................± V_GSO max. 20 V
Drain current (DC)............................ I_D max. 300 mA
Drain current (peak) ............................I_DM max. 1.2 A
Total power dissipation up to T_amb = 25 °C (note 1) ............P_tot max. 1 W
Storage temperature range.................... T_stg -65 to + 150 °C
Junction temperature............................ Tj max. 150 °C
Note:1. Transistor mounted on printed-circuit board, max. lead length 4 mm, mounting pad for drain lead min. 10 mm ´ 10 mm.

N-channel enhancement mode vertical D-MOS transistor BSN205 in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications such as in relays, line and high speed transformer drivers etc.