Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 50 V ±VGSO gate-source voltage open drain 20 V ID ...
BSN10: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdown.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-sourc...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
drain-source voltage |
50 |
V | ||
±VGSO |
gate-source voltage |
open drain |
20 |
V | |
ID |
DC drain current |
175 |
mA | ||
IDM |
peak drain current |
300 |
A | ||
Ptot |
total power dissipation |
up to Tamb = 25 °C; note 1 |
830 |
W | |
Tstg |
storage temperature |
-65 |
150 |
°C | |
Tj |
operating junction temperature |
150 |
°C |
Note:1. Device mounted on a printed circuit board, maximum lead length 4 mm.
N-channel BSN10 enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use in general purpose fast switching applications.