Features: • Half-bridge• Including fast free-wheeling diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Collector-gate voltageRGE = 20 k VCGR 600 Gate-emitte...
BSM400GB60DN2: Features: • Half-bridge• Including fast free-wheeling diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit Collector-emit...
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DescriptionThe BSM400GA120D is designed as the IGBT power module that has four points of features:...
Features: • Low Loss IGBT• Low inductance single switch• Including fast free- wh...
Parameter |
Symbol |
Values |
Unit |
Collector-emitter voltage |
VCE |
600 |
V |
Collector-gate voltage RGE = 20 k |
VCGR |
600 | |
Gate-emitter voltage |
VGE |
± 20 | |
DC collector current TC = 25 °C TC = 80 °C |
IC |
475 400 |
A |
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
lCpuls |
950 800 | |
Power dissipation per IGBT TC = 25 °C |
Ptot |
1400 |
W |
Chip temperature |
Tj |
+ 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |
°C |