Features: • Low Loss IGBT• Low inductance single switch• Including fast free- wheeling diodes• Package with insulated metal base plateSpecifications Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage, ...
BSM400GA120DL: Features: • Low Loss IGBT• Low inductance single switch• Including fast free- wheeling diodes• Package with insulated metal base plateSpecifications Parameter Symbo...
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DescriptionThe BSM400GA120D is designed as the IGBT power module that has four points of features:...
Parameter |
Symbol |
Values |
Unit |
Collector-emitter voltage |
VCE |
1200 |
V |
Collector-gate voltage, RGS = 20 k |
VCGR |
1200 | |
Gate-source voltage |
V GE |
± 20 | |
DC collector current TC = 25 °C TC = 80 °C |
Ic |
680
400
|
A |
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C |
Ic puls |
1360
800 | |
Power dissipation per IGBT TC = 25 °C |
Ptot |
2700 |
W |
Chip temperature |
Tj |
+ 150 |
°C |
Storage temperature |
Tstg |
-55 ... + 150 |