BSM200GA170DN2S

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Continuous Collector Current at 25 C : 290 A
Package / Case : 62MM
Collector- Emitter Voltage VCEO Max : 1700 V
Configuration : Single Dual Emitter


Description

The BSM200GA170DN2S is one kind of IGBT-modules. The absolute maximum ratings of the BSM200GA170DN2S can be summarized as:(1)collector-emitter voltage:1200 V;(2)DC-collector current:370 A;(3)repetitive peak collector current:400 A;(4)total power dissipation:1470 W;(5)gate-emitter peak voltage:+/- 20V;(6)DC forward current:200 A;(7)repetitive peak forw. current:400 A;(8)insulation test voltage:2.5 kV.

And the characteristic values of the BSM200GA170DN2S can be summarized as:(1)collector-emitter saturation voltage:2.4 to t.b.d. V;(2)gate threshold voltage:4.5 to 6.5 V;(3)gate charge:t.b.d. uC;(4)input capacitance:13 nF;(5)reverse transfer capacitance:t.b.d. uF;(6)collector-emitter cut-off current:500 uA;(7)gate-emitter leakage current:400 nA. If you want to know more information such as the electrical characteristics about the BSM200GA170DN2S, please download the datasheet in www.seekic.com or www.chinaicmart.com .