BSM150GT120DN2

Packaging :
Configuration : Hex
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.5 V
Gate-Emitter Leakage Current : 320 nA
Package / Case : EconoPACK 3A
Power Dissipation : 1.25 KW
Continuous Collector Current at 25 C : 200 A


Features:

• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate




Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	VCE	1200	V
Collector-gate voltage, RGS = 20 k	VCGR	1200
Gate-source voltage	V GE	± 20
DC collector current TC = 25 °C TC = 80 °C	Ic	200 150	A
Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C	Ic puls	400 300
Power dissipation, TC = 25 °C	Ptot	1250	W
Chip temperature	Tj	+ 150	°C
Storage temperature	Tstg	-55 ... + 150

Description

The BSM150GT120DN2 has four features.(1)solderable power module.(2)3-phase full-bridge.(3)including fast free-wheel diodes.(4)package with insulated metal base plate.

The BSM150GT120DN2 has some maximum ratings.(1)the parameter is collector-emitter voltage,the symbol is VCE,the values of BSM150GT120DN2 is 1200,the unit is V.(2)the parameter is collector-gate voltage RGE = 20 k,the symbol is VCGR,the values is 1200,the unit is V.(3)the parameter is gate-emitter voltage,the symbol is VGE,the values is ±20,the unit is V.(4)the parameter is DC collector current TC = 25 ,the symbol is IC,the values is 200,the unit is A.(5)the parameter is DC collector current TC = 80 ,the symbol is IC,the values is 150,the unit is A.(6)the parameter is pulsed collector current, tp = 1 ms TC = 25 ,the symbol is ICpuls,the values is 400,the unit is A.(7)the parameter is pulsed collector current, tp = 1 ms TC = 80 ,the symbol is ICpuls,the values is 300,the unit is A.(8)the parameter is power dissipation per IGBT TC = 25 ,the symbol is Ptot,the values is 1250,the unit is W.(9)the parameter is chip temperature,the symbol is Tj,the values is +150,the unit is .(10)the parameter is storage temperature,the symbol is Tstg,the values is -55 to +150,the unit is .(11)the parameter is thermal resistance, chip case,the symbol is RthJC,the values is 0.12,the unit is k/W.(12)the parameter is diode thermal resistance, chip case,the symbol is RthJCD,the values is 0.28,the unit is k/W.(13)the parameter is insulation test voltage, t = 1min,the symbol is Vis,the values is 2500,the unit is Vac.