BSM300GA170DN2S

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Configuration : Single
Power Dissipation : 2500 W
Collector- Emitter Voltage VCEO Max : 1700 V
Continuous Collector Current at 25 C : 440 A
Package / Case : Single Switch Sense


Description

The BSM300GA170DN2S is designed as the IGBT power module that has four points of features:(1)single switch; (2)including fast free-wheeling diodes; (3)enlarged diode area; (4)package with insulated metal base plate.

The absolute maximum ratings of the BSM300GA170DN2S can be summarized as:(1)collector-emitter voltage:1200 V;(2)collector-gate voltage RGE=20 k: 1200 V;(3)gate-emitter voltage:±20 V;(4)DC collector current Tc=25 °C:430 A;(5)DC collector current Tc=80 °C:300 A;(6)pulsed collector current, tp=1 ms Tc=25 °C:860 A;(7)pulsed collector current, tp=1 ms Tc=80 °C:600 A;(8)power dissipation per IGBT:2500 W;(9)chip temperature:+150°C;(10)storage temperature:-55°C to + 150°C;(11)thermal resistance, chip case:</=0.05 K/W;(12)diode thermal resistance, chip case:</=0.0065 K/W;(13)insulation test voltage, t=1min.:2500 Vac. If you want to know more information such as the electrical characteristics about the BSM300GA170DN2S, please download the datasheet in www.seekic.com or www.chinaicmart.com .