BSM150GB170DN2, US $ 116.48-129.43 , Infineon Technologies, BSM150GB170DN2 DataSheet download, circuit diagram from SeekIC.com

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BSM150GB170DN2: IGBT Modules 1700V 150A DUAL

BSM150GB170DN2 Data Sheet

US $ 116.48~129.43 / Piece | Get Latest Price

Part Number:: BSM150GB170DN2
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Product Details

Quick Details

Product :	IGBT Silicon Modules	Configuration :	Dual
Collector- Emitter Voltage VCEO Max :	1700 V	Collector-Emitter Saturation Voltage :	3.4 V
Continuous Collector Current at 25 C :	220 A	Gate-Emitter Leakage Current :	100 nA
Power Dissipation :	1.25 KW	Maximum Operating Temperature :	+ 150 C
Package / Case :	62MM

Description

Packaging :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Configuration : Dual
Power Dissipation : 1.25 KW
Package / Case : 62MM
Collector- Emitter Voltage VCEO Max : 1700 V
Gate-Emitter Leakage Current : 100 nA
Collector-Emitter Saturation Voltage : 3.4 V
Continuous Collector Current at 25 C : 220 A

Features:

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R_{G on,min} = 10 Ohm

Specifications

Parameter	Symbol	Values	Unit
Collector-emitter voltage	V_CE	1700	V
Collector-gate voltage RGE = 20 k	V_CGR	1700
Gate-emitter voltage	V_GE	± 20
DC collector current T_C = 25 °C T_C= 80 °C	I_C	220 150	A
Pulsed collector current, t_p= 1 ms T_C= 25 °C T_C= 80 °C	l_Cpuls	440 300	A
Power dissipation per IGBT T_C = 25 °C	P_tot	1250	W
Chip temperature	T_j	+ 150	°C
Storage temperature	T_stg	-55 ... + 150	°C

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BSM150GB170DN2

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