Features: · Power module· Half-bridge· FREDFET· N channel· Enhancement mode· Package with insulated metal base plate· Package outline/Circuit diagram: 2a1)Specifications Parameter Symbol Values Unit Collector-emitter voltage VDS 1000 V Collector-gate voltage RGS = 20k VDGR ...
BSM294F: Features: · Power module· Half-bridge· FREDFET· N channel· Enhancement mode· Package with insulated metal base plate· Package outline/Circuit diagram: 2a1)Specifications Parameter Symbol Va...
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DescriptionThe BSM200GA120D is one kind of IGBT-modules. The absolute maximum ratings of the BSM20...
Parameter | Symbol |
Values |
Unit |
Collector-emitter voltage | VDS |
1000 |
V |
Collector-gate voltage RGS = 20k | VDGR |
1000 | |
Gate-emitter voltage | VGS |
±20 | |
Continuous drain current, TC = 25 | ID |
18 |
A |
Pulsed drain current, TC = 25 | ID puls |
72 | |
Operating and storage temperature range | Tj, Tstg |
- 55 . + 150 |
|
Power dissipation, TC = 25 | Ptot |
400 |
W |
Thermal resistance Chip-case | Rth JC |
0.31 |
K/W |
Insulation test voltage2), t = 1min. | Vis |
2500 |
Vac |
Creepage distance, drain-source | - |
16 |
mm |
Clearance, drain-source | - |
11 | |
DIN humidity category, DIN 40 040 | - |
F |
- |
IEC climatic category, DIN IEC 68-1 | - |
55/150/56 |